Experimental study on heavy ion single event effects in SOI SRAMs
文件大小: 237k
源码售价: 10 个金币 积分规则     积分充值
资源说明:Experimental study on heavy ion single event effects in SOI SRAMs,李永宏,贺朝会,64K silicon-on-insulator (SOI) SRAMs were exposed to different heavy ions, Cu, Br, I, Kr. Experiment results show that the heavy ion single event upset(SEU) threshold Linear Energy
本源码包内暂不包含可直接显示的源代码文件,请下载源码包。