High-strain InGaAs/GaAs quantum well grown by MOCVD - 源码 - 源码 - 免费下载

High-strain InGaAs/GaAs quantum well grown by MOCVD

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资源说明：High-strain InGaAs/GaAs quantum wells (QWs) are grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Photoluminescence (PL) at room temperature is applied for evaluation of the optical property. The influence of growth temperature, V/III ratio, and growth rate on PL characteristic are investigated. It is found that the growth temperature and V/III ratio have strong effects on the peak wavelength and PL intensity. The full-width at half-maximum (FWHM) of PL peak increases wit

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