Near-infrared lateral photovoltaic effect of epitaxial LaTiO3+δ films under high pressure
文件大小:
587k
资源说明:A lateral photovoltaic effect (LPE) is discovered in an LaTiO3+δ film epitaxially grown on a (100) SrTiO3 substrate. Under the illumination of a continuous 808 nm laser beam that is focused on the LaTiO3+δ film through the SrTiO3 substrate, the open-circuit photovoltage depends linearly on the illuminated position. The sensitivity of the LPE can be modified by the bias current. The LaTiO3+δ film shows a stable photoelectric property under the high pressure, up to 9 MPa. These results indicate th
本源码包内暂不包含可直接显示的源代码文件,请下载源码包。