Microstructuring of anti-reflection f ilm for HgCdTe/Si IRFPA with femtosecond laser pulse
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资源说明:A systematic series of silicon (Si) wafer with microstructured anti-reflection film is prepared by femtosecond laser pulse. The dependence of the morphology and optical properties of the microstructured Si on the experimental parameters is thoroughly investigated. With the laser pulse duration of 40 fs, central wavelength of 800 nm, repetition rate of 250 kHz, laser pulse power of 300 mW, 250 \mu m/s scanning speed, and 2 \mu m of displacement between the parallel scans in the air, the quasiorde
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