The effects of multiple scattering on performance of ballistic channel Strained-Si diodes - 源码 - 源码 - 免费下载

The effects of multiple scattering on performance of ballistic channel Strained-Si diodes

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资源说明：We have investigated the effects of multiple scattering on electron velocity, current and energy in the drain regions of the Strained-Si diodes. The covered cases in this study are ballistic channel Si-diodes with strained channel or drain, and with strained channel and drain, respectively. For a selected Ge content, the simulation results show that the velocity of electrons in the drain regions of strained channel and drain is lower than that of strained drain at the lower bias voltages (Vd<

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